发明名称 External resonator-type light emitting device
摘要 An external resonator type light emitting system includes a light source oscillating a semiconductor laser light and a grating device providing an external resonator with the light source. The light source includes an active layer oscillating the semiconductor laser light. The grating device includes an optical waveguide having an incident face to which the semiconductor laser is incident and an emitting face of emitting an emitting light of a desired wavelength, a Bragg grating formed in the optical waveguide, and a propagating portion provided between the incident face and the Bragg grating. Formulas (1) to (4) are satisfied.
申请公布号 US9627853(B2) 申请公布日期 2017.04.18
申请号 US201514958241 申请日期 2015.12.03
申请人 NGK INSULATORS, LTD. 发明人 Kondo Jungo;Yamaguchi Shoichiro;Yoshino Takashi;Takeuchi Yukihisa
分类号 H01S5/125;H01S5/14;H01S5/022;H01S5/10;G02B6/124;H01S5/028 主分类号 H01S5/125
代理机构 Cermak Nakajima & McGowan LLP 代理人 Cermak Nakajima & McGowan LLP ;Nakajima Tomoko
主权项 1. An external resonator type light emitting system comprising a light source oscillating a semiconductor laser light and a grating device providing an external resonator with said light source; wherein said light source comprises an active layer oscillating said semiconductor laser light; wherein said grating device comprises an optical waveguide comprising an incident face to which said semiconductor laser light is incident and an emitting face of emitting an emitting light of single mode and having a desired wavelength, a Bragg grating formed in said optical waveguide, and a propagating portion provided between said incident face and said Bragg grating; wherein said optical waveguide comprises a core; wherein a cross section of said core is of a convex shape; and wherein the following formulas (1) to (5) are satisfied: (1) ΔλG≧0.8nm(2) Lb≦500 μm(3) La≦500 μm(4) nb≧1.8nm(5)|(dλG/dT)−(dλTM/dT)|≦0.03 nm / ° C.; wherein ΔλG represents a full width at half maximum of a peak of a Bragg reflectance in said formula (1); Lb represents a length of said Bragg grating in said formula (2); La represents a length of said active layer in said formula (3); and nb represents a refractive index of a material forming said Bragg grating in said formula (4); dλG/dT represents a temperature coefficient of a Bragg wavelength in said formula (5); and dλTM/dT represents a temperature coefficient of a wavelength satisfying a phase condition of an external resonator laser in said formula (5).
地址 Aichi-prefecture JP