Semiconductor device

摘要

A semiconductor device includes a first MOS transistor and a second MOS transistor of a second conductivity type. The first MOS transistor includes a first main electrode connected to a first potential and a second main electrode connected to a second potential. The second MOS transistor includes a first main electrode connected to a control electrode of the first MOS transistor and a second main electrode connected to the second potential. The control electrodes of the first and second MOS transistors are connected in common. The first and second MOS transistors are formed on a common wide bandgap semiconductor substrate. In the first MOS transistor, a main current flows in a direction perpendicular to a main surface of the wide bandgap semiconductor substrate. In the second MOS transistor, a main current flows in a direction parallel to the main surface of the wide bandgap semiconductor substrate.

主权项

1. A semiconductor device comprising:
a first MOS transistor of a first conductivity type including a first main electrode connected to a first potential and a second main electrode connected to a second potential; and a second MOS transistor of a second conductivity type including a first main electrode connected to a control electrode of said first MOS transistor and a second main electrode connected to said second potential, wherein said control electrode of said first MOS transistor and a control electrode of said second MOS transistor are connected in common, said first and second MOS transistors are formed on a common wide bandgap semiconductor substrate, in said first MOS transistor, a main current flows in a direction perpendicular to a main surface of said wide bandgap semiconductor substrate, and in said second MOS transistor, a main current flows in a direction parallel to the main surface of said wide bandgap semiconductor substrate.