Method for forming alignment marks and structure of same

摘要

A method of fabrication of alignment marks for a non-STI CMOS image sensor is introduced. In some embodiments, zero layer alignment marks and active are alignment marks may be simultaneously formed on a wafer. A substrate of the wafer may be patterned to form one or more recesses in the substrate. The recesses may be filled with a dielectric material using, for example, a field oxidation method and/or suitable deposition methods. Structures formed by the above process may correspond to elements of the zero layer alignment marks and/or to elements the active area alignment marks.

主权项

1. A method for forming alignment marks, the method comprising:
providing a substrate; forming a first plurality of doped regions in a pixel region of the substrate; forming a second plurality of doped regions in a frame cell region of the substrate; and recessing the second plurality of doped regions, thereby forming a plurality of alignment marks.