High electron mobility transistor

摘要

A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region, a matrix electrode structure arranged in the first region. The matrix electrode comprises a plurality of first electrodes arranged on the epitaxial stack, a plurality of second electrodes arranged on the epitaxial stack and adjacent to the plurality of first electrodes, a plurality of third electrodes arranged adjacent to the plurality of first electrodes and second electrodes. One of the plurality of first electrodes comprises a first side, a second side, a third side and a fourth side. The first side and the third side are opposite sides, and the second side and the fourth side are opposite sides. Two of the plurality of second electrodes are arranged on the first side and the third side, and two of the plurality of third electrodes are arranged on the second side and the fourth side.

主权项

1. A high electron mobility transistor, comprising:
a substrate; an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region; a matrix electrode structure arranged in the first region comprising a plurality of first electrodes arranged on the epitaxial stack; a plurality of second electrodes arranged on the epitaxial stack and adjacent to the plurality of first electrodes; a plurality of third electrodes arranged adjacent to the plurality of first electrodes and second electrodes; and wherein one of the plurality of first electrodes comprises a first side, a second side, a third side and a fourth side, wherein the first side and the third side are opposite sides, and the second side and the fourth side are opposite sides, wherein two of the plurality of second electrodes are arranged on the first side and the third side, and two of the plurality of third electrodes are arranged on the second side and the fourth side.