Method of fabricating electrostatic discharge protection structure

摘要

A method of fabricating an electrostatic discharge protection structure includes the following steps. Firstly, a semiconductor substrate is provided. Plural isolation structures, a well region, a first conductive region and a second conductive region are formed in the semiconductor substrate. The well region contains first type conducting carriers. The first conductive region and the second conductive region contain second type conducting carriers. Then, a mask layer is formed on the surface of the semiconductor substrate, wherein a part of the first conductive region is exposed. Then, a first implantation process is performed to implant the second type conducting carriers into the well region by using the mask layer as an implantation mask, so that a portion of the first type conducting carriers of the well region is electrically neutralized and a first doped region is formed under the exposed part of the first conductive region.

主权项

1. A method of fabricating an electrostatic discharge protection structure, the method comprising steps of:
providing a semiconductor substrate, wherein a plurality of isolation structures, a well region, a first conductive region and a second conductive region are formed in the semiconductor substrate, wherein the well region contains a plurality of first type conducting carriers, and the first conductive region and the second conductive region contain a plurality of second type conducting carriers, wherein the well region is arranged between the plurality of isolation structures, and the first conductive region and the second conductive region are formed in a surface of the semiconductor substrate over the well region; forming a mask layer on the surface of the semiconductor substrate, wherein a part of the first conductive region is exposed; and performing a first implantation process to implant the second type conducting carriers into the well region by using the mask layer as an implantation mask, so that a portion of the first type conducting carriers of the well region is electrically neutralized and a first doped region is formed under the exposed part of the first conductive region, wherein the first doped region is separated from the first conductive region by an unneutralized well region, which is a portion of the well region where the first type conducting carriers are not neutralized by the first implantation process.