发明名称 METHOD FOR INSPECTING PHOTORESIST PATTERN
摘要 Example embodiments of inventive concepts provide a method for inspecting and/or observing photoresist patterns. The inspecting and/or observing methods may include forming at least an anti-reflective layer on a substrate, forming a fluorescent photoresist pattern on the anti-reflective layer, the fluorescent photoresist pattern having fluorescence, and observing and/or inspecting a shape of the fluorescent photoresist pattern using a fluorescence microscope.
申请公布号 US2017103924(A1) 申请公布日期 2017.04.13
申请号 US201615252952 申请日期 2016.08.31
申请人 Samsung Electronics Co., Ltd. 发明人 Park Kyung Jae;SHIM Wooseok
分类号 H01L21/66;G03F7/20 主分类号 H01L21/66
代理机构 代理人
主权项 1. A method for inspecting a photoresist pattern, the method comprising: forming an anti-reflective layer on a substrate; forming a fluorescent photoresist pattern on the anti-reflective layer, the fluorescent photoresist pattern having fluorescence; and inspecting a shape of the fluorescent photoresist pattern using a fluorescence microscope.
地址 Suwon-si KR