发明名称 |
METHOD FOR INSPECTING PHOTORESIST PATTERN |
摘要 |
Example embodiments of inventive concepts provide a method for inspecting and/or observing photoresist patterns. The inspecting and/or observing methods may include forming at least an anti-reflective layer on a substrate, forming a fluorescent photoresist pattern on the anti-reflective layer, the fluorescent photoresist pattern having fluorescence, and observing and/or inspecting a shape of the fluorescent photoresist pattern using a fluorescence microscope. |
申请公布号 |
US2017103924(A1) |
申请公布日期 |
2017.04.13 |
申请号 |
US201615252952 |
申请日期 |
2016.08.31 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Park Kyung Jae;SHIM Wooseok |
分类号 |
H01L21/66;G03F7/20 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
|
主权项 |
1. A method for inspecting a photoresist pattern, the method comprising:
forming an anti-reflective layer on a substrate; forming a fluorescent photoresist pattern on the anti-reflective layer, the fluorescent photoresist pattern having fluorescence; and inspecting a shape of the fluorescent photoresist pattern using a fluorescence microscope. |
地址 |
Suwon-si KR |