发明名称 |
TRANSISTOR THAT EMPLOYS COLLECTIVE MAGNETIC EFFECTS THEREBY PROVIDING IMPROVED ENERGY EFFICIENCY |
摘要 |
A device or class of devices that provides a mechanism for controlling charge current flow in transistors that employs collective magnetic effects to overcome voltage limitations associated with single-particle thermionic emission as in conventional MOSFETs. Such a device may include two or more magnetic stacks with an easy-in-plane ferromagnetic film sandwiched between oppositely magnetically oriented perpendicular magnetization anisotropy (PMA) ferromagnets. Each stack includes two non-magnetic layers separating the easy-plane ferromagnetic film from the PMA layers. Charge current flow through one of these stacks controls the current-voltage negative differential resistance characteristics of the second stack through collective magnetic interactions. This can be exploited in a variety of digital logic gates consuming less energy than conventional CMOS integrated circuits. Furthermore, the easy-in-plane magnetic films may be subdivided into regions coupled through exchange interactions and the in-plane fixed magnetic layers in the input magnetic stacks can be used in non-volatile logic and memory. |
申请公布号 |
US2017104151(A1) |
申请公布日期 |
2017.04.13 |
申请号 |
US201514881372 |
申请日期 |
2015.10.13 |
申请人 |
Board of Regents, The University of Texas System |
发明人 |
Banerjee Sanjay K.;MacDonald Allan;Register, II Leonard Franklin;Tutuc Emanuel;Sodemann Inti;Chen Hua;Mou Xuehao |
分类号 |
H01L43/06;H01L43/10;H01L43/04 |
主分类号 |
H01L43/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Austin TX US |