VARIABLE RESISTIVE MEMORY DEVICE HAVING A PHASE CHANGE STRUCTURE AND METHOD OF MANUFACTURING THE SAME

摘要

A variable resistive memory device may include a phase change region, a phase change layer, a gap-filling layer and an upper electrode. The phase change region may have a sidewall and a bottom surface. The phase change layer may have a linear shape extended along the bottom surface and the sidewall of the phase change region. The gap-filling layer may be formed in a portion of the phase change region surrounded by the phase change layer. The upper electrode may be formed on the phase change layer and the gap-filling layer.

主权项

1. A variable resistive memory device comprising:
a phase change region having a sidewall and a bottom surface; a linear phase change layer formed along the sidewall and the bottom surface of the phase change region; a gap-filling layer formed in the phase change region and surrounded by the phase change layer; and an upper electrode formed over the phase change layer and the gap-filling layer.