PHOTOVOLTAIC DEVICE CONTAINING AN N-TYPE DOPANT SOURCE

摘要

Described herein is a method of using the buffer layer of a transparent conductive substrate as a dopant source for the n-type window layer of a photovoltaic device. The dopant source of the buffer layer distributes to the window layer of the photovoltaic device during semiconductor processing. Described herein are also methods of manufacturing embodiments of the substrate structure and photovoltaic device. Disclosed embodiments also describe a photovoltaic module and a photovoltaic structure with a plurality of photovoltaic devices having an embodiment of the substrate structure.

主权项

1. A method of forming a photovoltaic device comprising:
providing a light-penetrable support layer; forming a transparent conductive oxide over the support layer; forming a buffer layer over the transparent conductive oxide; doping the buffer layer with a n-type dopant at a first concentration; forming a window layer over the buffer layer, the n-type dopant diffusing from the buffer layer into the window layer during thermal processing; and forming an absorber layer over the window layer.