发明名称 |
NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
A nitride semiconductor device includes: a first nitride semiconductor layer serving as an electron transit layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer, the second nitride semiconductor layer having a band gap greater than that of the first nitride semiconductor layer and serving as an electron supply layer; a third nitride semiconductor layer formed on the second nitride semiconductor layer, the third nitride semiconductor layer having a band gap greater than that of the first nitride semiconductor layer and smaller than that of the second nitride semiconductor layer; and a gate part formed on the third nitride semiconductor layer, wherein the gate part has a fourth nitride semiconductor layer formed on the third nitride semiconductor layer and includes an acceptor type impurity, and a gate electrode formed on the fourth nitride semiconductor layer. |
申请公布号 |
US2017104091(A1) |
申请公布日期 |
2017.04.13 |
申请号 |
US201615273336 |
申请日期 |
2016.09.22 |
申请人 |
ROHM CO., LTD. |
发明人 |
TANAKA Taketoshi |
分类号 |
H01L29/778;H01L29/66;H01L29/20 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
1. A nitride semiconductor device, comprising:
a first nitride semiconductor layer serving as an electron transit layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer, the second nitride semiconductor layer having a band gap greater than that of the first nitride semiconductor layer and serving as an electron supply layer; a third nitride semiconductor layer formed on the second nitride semiconductor layer, the third nitride semiconductor layer having a band gap greater than that of the first nitride semiconductor layer and smaller than that of the second nitride semiconductor layer; and a gate part formed on the third nitride semiconductor layer, wherein the gate part comprises a fourth nitride semiconductor layer formed on the third nitride semiconductor layer and including an acceptor type impurity, and a gate electrode formed on the fourth nitride semiconductor layer. |
地址 |
Kyoto JP |