METHOD FOR PREPARING TITANIUM-ALUMINUM ALLOY THIN FILM

摘要

A method for preparing a TiAl alloy thin film, wherein a reaction chamber is provided, in which at least one substrate is placed; an aluminum precursor and a titanium precursor are introduced into the reaction chamber, wherein the aluminum precursor has a molecular structure of a structural formula (I); and the aluminum precursor and the titanium precursor are brought into contact with the substrate so that a titanium-aluminum alloy thin film is formed on the surface of the substrate by vapor deposition. The method solves the problem of poor step coverage ability and the problem of incomplete filling with regard to the small-size devices by the conventional methods. Meanwhile, the formation of titanium-aluminum alloy thin films with the aid of plasma is avoided so that the substrate is not damaged by plasma.

主权项

1. A method for preparing a titanium-aluminum alloy thin film, comprising the steps of:
providing a reaction chamber in which at least one substrate is placed; introducing an aluminum precursor and a titanium precursor into the reaction chamber, wherein the aluminum precursor has a molecular structure of a structural formula (I): wherein, each of R1, R2, R3, R4, R5, R6, and R7 represents a hydrogen atom, a C1-C6 alkyl group, a C2-C5 alkenyl group, a C3-C10 cycloalkyl group, a C6-C10 aryl group, —Si(R0)3, or the groups described above substituted by a halogen atom, wherein R0 is a C1-C6 alkyl group or a halogen-substituted C1-C6 alkyl group, and R1, R2, R3, R4, R5, R6, and R7 are the same or different; and bringing the aluminum precursor and the titanium precursor into contact with the substrate so as to form a titanium-aluminum alloy thin film on the surface of the substrate by vapor deposition.