Nitride semiconductor device with asymmetric electrode tips

摘要

Nitride semiconductor devices having interdigitated array source and drain electrodes arranged like crossed fingers are described. The electric fields extended at the tips of the array electrodes are relaxed. Desirably, the rounded source electrode tip ends have a larger effective diameter than the rounded tip ends of the drain electrodes. Devices constructed accordingly have higher withstand voltages.

主权项

1. A semiconductor device, comprising:
a substrate base; a nitride semiconductor layer on the substrate base, comprising a laminated carrier supply layer and carrier transit layer region with a formed heterojunction therefrom; an insulating film disposed on the nitride semiconductor layer; a source electrode of a comb shape having a plurality of teeth portions with tips, disposed on the nitride semiconductor layer; a drain electrode of a comb shape having a plurality of teeth portions with tips disposed on the nitride semiconductor and interdigitated with the source electrode; and a gate electrode disposed on the nitride semiconductor layer between the source electrode and the drain electrode, wherein the tips of the plurality of teeth portions of the source electrode and the tips of the plurality of teeth portions of the drain electrode are semi-circular shaped, and the radius of curvatures of the tips of plurality of teeth portions of the source electrode are larger than the radius of curvatures of the tips of plurality of teeth portions of the drain electrode.