ELECTRICAL STORAGE SYSTEM INCLUDING A SHEET-LIKE DISCRETE ELEMENT, SHEET-LIKE DISCRETE ELEMENT, METHOD FOR PRODUCING SAME, AND USE THEREOF

摘要

An electrical storage element is provided that includes a discrete sheet-like element with particularly low transparency to high-energy electrical radiation, preferably in a range of wavelengths from 200 to 400 nm, and to the manufacturing thereof, and also relates to a discrete sheet-like element that exhibits particularly low transparency for high-energy electromagnetic radiation, preferably in a range of wavelengths from 200 to 400 nm, and to the manufacturing thereof.

主权项

1. An electrical storage system, comprising:
a sheet-like discrete element, wherein the sheet-like discrete element has a transmittance selected from the group consisting of: 20% or less in a range from 200 nm to 270 nm at a thickness of 30 μm, 2.0% or less at 222 nm at a thickness of 30 μm, 1.0% or less at 248 nm at a thickness of 30 μm, 50% or less at 282 nm at a thickness of 30 μm, 85% or less at 308 nm at a thickness of 30 μm, 92% or less at 351 nm at a thickness of 30 μm, 3% or less in a range from 200 nm to 270 nm at a thickness of 100 μm, 3.0% or less at 222 nm at a thickness of 100 μm, 3.0% or less at 248 nm at a thickness of 100 μm, 20% or less at 282 nm at a thickness of 100 μm, 75% or less at 308 nm at a thickness of 100 μm, and 92% or less at 351 nm at a thickness of 100 μm, wherein the sheet-like discrete element has a total thickness variation of not more than 25 μm based on wafer or substrate sizes in a range of >100 mm in diameter, and wherein the sheet-like discrete element comprises a composition range, in wt %, of:ComponentRangeSiO230-85 Al2O30-15B2O33-20Na2O3-15K2O3-15CaO 0-0.1ZnO0-12TiO20.5-10.