| 发明名称 |
FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE |
| 摘要 |
Disclosed are a field effect transistor and method for manufacturing the same, and a display device. The field effect transistor includes: a source and a drain which are spaced apart from each other; a semi-conductor layer arranged between the source and the drain; a first gate layer located on a side of the semi-conductor layer; and a second gate layer located on the other side of the semi-conductor layer. The field effect transistor provided by the present disclosure is less energy-consuming; a method for manufacturing the same is low costing; and a display device using the same is also less energy-consuming. |
| 申请公布号 |
US2017104104(A1) |
申请公布日期 |
2017.04.13 |
| 申请号 |
US201514778144 |
申请日期 |
2015.05.19 |
| 申请人 |
Shenzhen China Star Optoelectronics Technology Co., Ltd. |
发明人 |
Xu Hongyuan;Hsiao Hsiang Chih;Su Chang I |
| 分类号 |
H01L29/786;H01L27/28;H01L29/423;H01L51/00;H01L51/05;H01L29/66 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A field effect transistor, comprising:
a source and a drain which are spaced apart from each other, a semi-conductor layer arranged between the source and the drain, a first gate layer located on one side of the semi-conductor layer, and a second gate layer located on the other side of the semi-conductor layer. |
| 地址 |
Shenzhen, Guangdong CN |
