INTEGRATED CIRCUIT DEVICE AND METHOD OF FABRICATING THE SAME

摘要

An integrated circuit device including a substrate having at least one fin-shaped active region, the at least one fin-shaped active region extending in a first direction, a gate line extending on the at least one fin-shaped active region in a second direction, the second direction intersecting with the first direction, a conductive region on a portion of the at least one fin-shaped active region at one side of the gate line, and a contact plug extending from the conductive region in a third direction, the third direction being perpendicular to a main plane of the substrate, may be provided. The contact plug may include a metal plug, a conductive barrier film on the conductive region, the conductive barrier film surrounding a sidewall and a bottom surface of the metal plug, the conductive barrier film including an N-rich metal nitride film, and a metal silicide film between the conductive region and the conductive barrier film.

主权项

1. An integrated circuit device comprising:
a substrate having at least one fin-shaped active region, the at least one fin-shaped active region extending in a first direction; a gate line extending on the at least one fin-shaped active region in a second direction, the second direction intersecting with the first direction; a conductive region on a portion of the at least one fin-shaped active region at one side of the gate line; and a contact plug extending from the conductive region in a third direction, the third direction being perpendicular to a main plane of the substrate, the contact plug including,
a metal plug,a conductive barrier film on the conductive region, the conductive barrier film surrounding a sidewall and a bottom surface of the metal plug, the conductive barrier film including an N-rich metal nitride film, anda metal silicide film between the conductive region and the conductive barrier film.