发明名称 |
ULTRA-HIGH MODULUS AND ETCH SELECTIVITY BORON-CARBON HARDMASK FILMS |
摘要 |
Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about −100 MPa to about 100 MPa. |
申请公布号 |
US2017103893(A1) |
申请公布日期 |
2017.04.13 |
申请号 |
US201615233351 |
申请日期 |
2016.08.10 |
申请人 |
Applied Materials, Inc. |
发明人 |
KULSHRESHTHA Prashant Kumar;DUAN Ziqing;NARASIMHA Karthik Thimmavajjula;LEE Kwangduk Douglas;KIM Bok Hoen |
分类号 |
H01L21/033 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
1. A method of processing a substrate, comprising:
flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius; flowing a boron-containing gas mixture into the processing volume; and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about −100 MPa to about 100 MPa. |
地址 |
Santa Clara CA US |