发明名称 RF PULSE REFLECTION REDUCTION FOR PROCESSING SUBSTRATES
摘要 Methods and systems for RF pulse reflection reduction in process chambers are provided herein. In some embodiments, a method includes (a) providing a plurality of pulsed RF power waveforms from a plurality of RF generators during a first time period, (b) determining an initial reflected power profile for each of the plurality of pulsed RF power waveforms, (c) for each of the plurality of pulsed RF power waveforms, determining a highest level of reflected power, and controlling at least one of a match network or the RF generator to reduce the highest level of reflected power, (d) determining an adjusted reflected power profile for each of the plurality of pulsed RF power waveforms and (e) repeating (c) and (d) until the adjusted reflected power profile for each of the plurality of pulsed RF power waveforms is within a threshold tuning range.
申请公布号 US2017103873(A1) 申请公布日期 2017.04.13
申请号 US201615212879 申请日期 2016.07.18
申请人 APPLIED MATERIALS, INC. 发明人 KAWASAKI Katsumasa
分类号 H01J37/32 主分类号 H01J37/32
代理机构 代理人
主权项 1. A method comprising: (a) providing a plurality of pulsed RF power waveforms from a plurality of RF generators to a process chamber during a first time period; (b) determining an initial reflected power profile for each of the plurality of pulsed RF power waveforms; (c) for each of the plurality of pulsed RF power waveforms, determining a highest level of reflected power during the first time period, andcontrolling at least one of a match network coupled to an RF generator that produced the pulsed RF power waveform, or the RF generator that produced the pulsed RF power waveform, to reduce the highest level of reflected power; (d) determining an adjusted reflected power profile for each of the plurality of pulsed RF power waveforms; and (e) repeating (c) and (d) until the adjusted reflected power profile for each of the plurality of pulsed RF power waveforms is within a threshold tuning range.
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