TRANSISTOR AND METHOD FOR FORMING THE SAME

摘要

The present disclosure provides a method for forming a transistor, including: forming a base structure, containing a first gate structure, an active layer covering the first gate structure, and an insulating structure in the active layer; forming a second gate structure on the active layer; forming a source-drain region, including a source region and a drain region in the active layer each on a different side of the second gate structure; and forming a first interlayer dielectric layer covering the base structure and the second gate structure. The method also includes: forming a first contact hole that exposes the first gate structure by etching the first interlayer dielectric layer and the insulating structure; and forming a second contact hole that exposes the second gate structure and a third contact hole that exposes the drain region by etching the first interlayer dielectric layer.

主权项

1. A method for forming a transistor, comprising:
forming a base structure, containing a first gate structure, an active layer covering the first gate structure, and an insulating structure in the active layer; forming a second gate structure on the active layer; forming a source-drain region, including a source region and a drain region in the active layer each on a different side of the second gate structure; forming a first interlayer dielectric layer covering the base structure and the second gate structure; forming a first contact hole that exposes the first gate structure by etching the first interlayer dielectric layer and the insulating structure; forming a second contact hole that exposes the second gate structure and a third contact hole that exposes the drain region by etching the first interlayer dielectric layer; and filling the first contact hole, the second contact hole, and the third contact hole with a conductive material to form a first plug structure, a second plug structure, and a third plug structure, that are aligned along a substantially same direction.