PROCESS FOR THE PREPARATION OF PURE OCTACHLOROTRISILANES AND DECACHLOROTETRASILANES

摘要

The invention relates to a process for producing trimeric and/or quaternary silicon compounds or trimeric and/or quaternary germanium compounds, where a mixture of silicon compounds or a mixture of germanium compounds is exposed to a nonthermal plasma, and the resulting phase is subjected at least once to a vacuum rectification and filtration.

主权项

1. A process for the preparation of at least one compound selected from the group consisting of trimeric and quaternary silicon compounds of the general formula Si3X8, Si4X10, or both
or of at least one compound selected from the group consisting of trimeric and/or and quaternary germanium compounds of the general formula Ge3X8, and/or Ge4X10, or both, the process comprising: a) exposing a mixture of silicon compounds of the general formula
Sin(R1 . . . R2n+2) or a mixture of germanium compounds of the general formula
Gen(R1 . . . R2n+2) to a nonthermal plasma to form a resulting phase
wherein n≧2, and R1 to R2n+2 is at least one element selected from the group consisting of hydrogen and Xwherein X
is at least one halogen selected from the group consisting of chlorine, bromine, and iodine, and b) subjecting the resulting phase at least once to a vacuum rectification and filtration, thereby obtaining
silicon compounds of the general formula Si3X8 or Si4X10 or germanium compounds of the general formula Ge3X8 or Ge4X10.