发明名称 |
MEMORY INCLUDING A SELECTOR SWITCH ON A VARIABLE RESISTANCE MEMORY CELL |
摘要 |
Embodiments include but are not limited to apparatuses and systems including memory having a memory cell including a variable resistance memory layer, and a selector switch in direct contact with the memory cell, and configured to facilitate access to the memory cell. Other embodiments may be described and claimed. |
申请公布号 |
US2017104030(A1) |
申请公布日期 |
2017.04.13 |
申请号 |
US201615297925 |
申请日期 |
2016.10.19 |
申请人 |
Micron Technology, Inc. |
发明人 |
Redaelli Andrea;Pirovano Agostino |
分类号 |
H01L27/24;G11C13/00;H01L45/00 |
主分类号 |
H01L27/24 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Boise ID US |