Epitaxy Technique for Growing Semiconductor Compounds

摘要

A solution for fabricating a semiconductor structure is provided. The semiconductor structure includes a plurality of semiconductor layers grown over a substrate using a set of epitaxial growth periods. During each epitaxial growth period, a first semiconductor layer having one of: a tensile stress or a compressive stress is grown followed by growth of a second semiconductor layer having the other of: the tensile stress or the compressive stress directly on the first semiconductor layer.

主权项

1. A semiconductor heterostructure comprising:
a plurality of semiconductor layers epitaxially grown over a substrate, the plurality of semiconductor layers including a set of periods, each period including:
a first semiconductor layer, wherein the first semiconductor layer is grown using a first molar ratio of group V precursors to group III precursors (first V/III ratio) causing a first stress being one of: a tensile stress or a compressive stress; anda second semiconductor layer located over the first semiconductor layer, wherein the second semiconductor layer is grown using a second molar ratio of group V precursors to group III precursors (second V/III ratio) causing a second stress being the other of: the tensile stress or the compressive stress, wherein at least one of the first stress or the second stress is graded.