发明名称 |
Generation of voltages |
摘要 |
Voltage generation circuits are useful in the generation of internal voltages for use in integrated circuits. Voltage generation circuits may include a stage capacitance and a voltage isolation device connected to the stage capacitance. The voltage isolation device may include a first current path between an input and an output of the voltage isolation device through a diode, and a second current path between the input and the output of the voltage isolation device through a gate. The gate is responsive to the contribution of a low-pass filter between the output of the voltage isolation device and the gate, and to the contribution of a high-pass filter between a clock signal node and the gate. |
申请公布号 |
US9621032(B2) |
申请公布日期 |
2017.04.11 |
申请号 |
US201514813883 |
申请日期 |
2015.07.30 |
申请人 |
Micron Technology, Inc. |
发明人 |
Pan Feng |
分类号 |
H02M3/07;H03L5/00 |
主分类号 |
H02M3/07 |
代理机构 |
Dicke, Billig & Czaja, PLLC |
代理人 |
Dicke, Billig & Czaja, PLLC |
主权项 |
1. A voltage generation circuit, comprising:
a stage capacitance; and a voltage isolation device connected to the stage capacitance, the voltage isolation device comprising:
a first current path between an input and an output of the voltage isolation device through a diode; anda second current path between the input and the output of the voltage isolation device through a gate;wherein the gate is responsive to a voltage level developed in response to a contribution of a low-pass filter between the output of the voltage isolation device and the gate, and to a contribution of a high-pass filter between a clock signal node and the gate. |
地址 |
Boise ID US |