Array substrate, manufacturing method thereof and display device

摘要

Embodiments of the present invention relate to an array substrate, a manufacturing method thereof and a display device. The manufacturing method of the array substrate comprises: preparing a base substrate; forming a gate electrode pattern on the base substrate; forming a gate insulating layer pattern on the base substrate with the gate electrode pattern formed thereon; and forming an active layer pattern, a pixel electrode pattern and source and drain patterns above the gate insulating layer pattern through a three-gray-tone mask process in one patterning process, wherein the gate electrode pattern, the active layer pattern, the source pattern and the drain pattern constitute a thin film transistor.

主权项

1. A manufacturing method of an array substrate for an LTPS TFT, comprising:
preparing a base substrate; forming a gate electrode pattern on the base substrate; forming a gate insulating layer pattern on the base substrate with the gate electrode pattern formed thereon; and forming an active layer pattern, a pixel electrode pattern and source and drain patterns above the gate insulating layer pattern through a three-gray-tone mask process in one patterning process, wherein the gate electrode pattern, the active layer pattern, the source pattern and the drain pattern constitute a thin film transistor, and forming the active layer pattern, the pixel electrode pattern and the source and drain patterns above the gate insulating layer pattern through the three-gray-tone mask process in the one patterning process comprises: sequentially forming an active layer thin film, a pixel electrode layer thin film and a source/drain metal layer thin film, wherein, the active layer thin film comprises a source region corresponding to the source pattern, a drain region corresponding to the drain pattern, and a channel region used to form a channel of the thin film transistor; forming a photoresist with a first thickness, a second thickness and a third thickness above the source/drain metal layer thin film by using the three-gray-tone mask process, the photoresist with the first thickness being located above the channel region, the photoresist with the second thickness being located above a region where the pixel electrode pattern is located, and the photoresist with the third thickness being located above the source region and the drain region, wherein, the first thickness is smaller than the second thickness, and the second thickness is smaller than the third thickness; and etching away the active layer thin film, the pixel electrode layer thin film and the source/drain metal layer thin film in a region without the photoresist to form the active layer pattern, etching away the pixel electrode layer thin film and the source/drain metal layer thin film above the channel region to form the channel region, etching away the source/drain metal layer thin film in a region where the photoresist with the second thickness is located to form the pixel electrode pattern, and removing the photoresist above the source region and the drain region to form the source pattern and the drain pattern.