Thin film transistor display panel and method of manufacturing the same

摘要

A thin film transistor display panel according to an exemplary embodiment of the present invention includes a substrate, a first insulating layer formed on the substrate, a semiconductor layer formed on the first insulating layer, a second insulating layer formed on the semiconductor layer, and a gate electrode formed on the second insulating layer, in which the first insulating layer includes a light blocking material, and a thickness of the first insulating layer is greater than or equal to a thickness of the second insulating layer.

主权项

1. A thin film transistor display panel, comprising:
a substrate; a first insulating layer formed on the substrate; a semiconductor layer formed on the first insulating layer; a second insulating layer formed on the semiconductor layer; and a gate electrode formed on the second insulating layer, wherein the first insulating layer includes a light blocking material, wherein the second insulating layer comprises a lower gate insulation film, a second light blocking member formed on the lower gate insulation film, and an upper gate insulation film formed on the second light blocking member, and wherein a thickness of the first insulating layer is greater than or equal to a thickness of the second insulating layer.