DC voltage conversion module, semiconductor module, and method of making semiconductor module

摘要

A DC voltage conversion module includes a substrate, an input terminal, an output terminal, a ground terminal, a DC voltage conversion control element mounted on the substrate, a coil mounted on the substrate and connected to the DC voltage conversion control element and the output terminal, an input-side capacitor mounted on the substrate and connected to the input terminal and the ground terminal, and an output-side capacitor mounted on the substrate and connected to the output terminal and the ground terminal. The input terminal, the output terminal and the ground terminal project in a predetermined projecting direction parallel to each other. The ground terminal is arranged between the input terminal and the output terminal in a direction perpendicular to the projecting direction.

主权项

1. A semiconductor module comprising:
a substrate including an obverse surface and a reverse surface and formed with at least one through-hole; a semiconductor element mounted on the obverse surface of the substrate; a heat dissipation plate arranged to face the reverse surface of the substrate; and a heat conduction member including a filling portion filling the through-hole and a bulging portion bulging to the reverse surface side of the substrate, wherein the bulging portion has a thickness that reduces as proceeding away from the filling portion in an in-plane direction of the substrate, the bulging portion being held in contact with the heat dissipation plate, wherein the substrate includes a base member having an obverse surface and a reverse surface, a first obverse wiring pattern formed on the obverse surface of the base member, a first reverse wiring pattern formed on the reverse surface of the base member, the semiconductor element being mounted on the first obverse wiring pattern, the first reverse wiring pattern being electrically connected to the first obverse wiring pattern via the through-hole, the bulging portion being formed to cover at least part of the first reverse wiring pattern, and wherein the semiconductor module further comprises a second reverse wiring pattern formed on the reverse surface of the base member and spaced from the first reverse wiring pattern, wherein the second reverse wiring pattern is insulated from the heat dissipation plate.