| 发明名称 | Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device | ||
| 摘要 | An apparatus includes a capping layer disposed on top of a free layer. The apparatus also includes a magnetic etch stop layer disposed on top of the capping layer. The capping layer and the magnetic etch stop layer are included in a spin-transfer torque magnetoresistive random access memory (STT-MRAM) magnetic tunnel junction (MTJ) device. | ||
| 申请公布号 | US9620706(B2) | 申请公布日期 | 2017.04.11 |
| 申请号 | US201414558103 | 申请日期 | 2014.12.02 |
| 申请人 | QUALCOMM Incorporated | 发明人 | Lee Kangho;Park Chando;Kan Jimmy;Gottwald Matthias Georg;Zhu Xiaochun;Kang Seung Hyuk |
| 分类号 | H01L29/82;H01L21/02;H01L21/00;H01L43/08;H01L43/12 | 主分类号 | H01L29/82 |
| 代理机构 | Toler Law Group, PC | 代理人 | Toler Law Group, PC |
| 主权项 | 1. An apparatus comprising: a capping layer disposed on top of a free layer; a magnetic layer disposed on top of the capping layer; and an electrode layer disposed between the magnetic layer and a hard mask layer, wherein the capping layer and the magnetic layer are included in a spin-transfer torque magnetoresistive random access memory (STT-MRAM) magnetic tunnel junction (MTJ) device. | ||
| 地址 | San Diego CA US | ||