发明名称 Ultraviolet sensor and ultraviolet detecting device
摘要 An ultraviolet sensor includes a silicon photodiode array having a plurality of first pixel regions and a plurality of second pixel regions. A filter film is disposed on each of the first pixel regions so as to cover each first pixel region, except on each second pixel region. The filter film lowers transmittance in a detection target wavelength range in the ultraviolet region. Each of each first pixel region and each second pixel region includes at least one pixel having an avalanche photodiode to operate in Geiger mode, and a quenching resistor connected in series to the avalanche photodiode. Each of the quenching resistors in the plurality of first pixel regions is connected through a first signal line to a first output terminal. Each of the quenching resistors in the plurality of second pixel regions is connected through a second signal line to a second output terminal.
申请公布号 US9620662(B2) 申请公布日期 2017.04.11
申请号 US201514855968 申请日期 2015.09.16
申请人 HAMAMATSU PHOTONICS K.K. 发明人 Yamamoto Koei;Hayatsu Kenzo;Nagano Terumasa;Okuwa Yuki;Yamada Ryuta
分类号 H01L31/107;H01L31/028;H01L27/146 主分类号 H01L31/107
代理机构 Drinker Biddle & Reath LLP 代理人 Drinker Biddle & Reath LLP
主权项 1. An ultraviolet sensor comprising: a silicon photodiode array having a plurality of first pixel regions and a plurality of second pixel regions, which are alternately disposed in a first direction; a filter film lowering transmittance in a detection target wavelength range in the ultraviolet region; a first output terminal connected to outputs of the plurality of first pixel regions; and a second output terminal connected to outputs of the plurality of second pixel regions, wherein the filter film is disposed on each of the first pixel regions so as to cover each first pixel region, except on each second pixel region, wherein each of each first pixel region and each second pixel region includes at least one pixel including an avalanche photodiode to operate in Geiger mode, and a quenching resistor connected in series to the avalanche photodiode, wherein each of the quenching resistors in the plurality of first pixel regions is connected through a first signal line to the first output terminal, and wherein each of the quenching resistors in the plurality of second pixel regions is connected through a second signal line to the second output terminal.
地址 Hamamatsu-shi, Shizuoka JP
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