发明名称 SWITCH DEVICE AND STORAGE UNIT
摘要 A switch device includes: a first electrode; a second electrode arranged to face the first electrode; and a switch layer provided between the first electrode and the second electrode. The switch layer includes a first layer containing a chalcogen element, and a second layer containing a high resistance material.
申请公布号 US2017098684(A1) 申请公布日期 2017.04.06
申请号 US201615379390 申请日期 2016.12.14
申请人 Sony Semiconductor Solutions Corporation 发明人 Ohba Kazuhiro;Sei Hiroaki
分类号 H01L27/24;H01L45/00 主分类号 H01L27/24
代理机构 代理人
主权项 1. A storage unit comprising: a plurality of storage devices arranged in a matrix, respective ones of the storage devices including: a first storage electrode,a second storage electrode disposed facing the first storage electrode,an ion source layer disposed between the first storage electrode and the second storage electrode, and containing one or more chalcogen elements selected from tellurium (Te), sulfur (S), and selenium (Se), anda resistance variation layer disposed between the first storage electrode and the second storage electrode; and a plurality of switch devices arranged corresponding to the plurality of storage devices, respective ones of the switch devices including: a first switch electrode,a second switch electrode disposed facing the second switch electrode, anda switch layer disposed between the first switch electrode and the second switch electrode.
地址 Kanagawa JP