SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes: an electron transit layer constituted of GaN; an electron supply layer constituted of Inx1Aly1Ga1-x1-y1N (0≦x1<1, 0≦y1<1, 0<1−x1−y1<1) and provided on the electron transit layer; a source electrode and a drain electrode that are provided on the electron supply layer and located apart from each other; a threshold voltage adjustment layer constituted of Inx2Aly2Ga1-x2-y2N (0≦x2<1, 0≦y2<1, 0<1−x2−y2≦1) of a p-type and provided on a part of the electron supply layer located between the source electrode and the drain electrode; and a gate electrode provided on the threshold voltage adjustment layer. A high resistance layer is respectively interposed both between the gate electrode and the threshold voltage adjustment layer, and between the threshold voltage adjustment layer and the electron supply layer.

主权项

1. A semiconductor device comprising:
an electron transit layer constituted of gallium nitride; an electron supply layer constituted of Inx1Aly1Ga1-x1-y1N (0≦x1<1, 0≦y1<1, 0<1−x1−y1<1) and provided on the electron transit layer; a source electrode provided on the electron supply layer; a drain electrode provided on the electron supply layer and is apart from the source electrode; a threshold voltage adjustment layer constituted of Inx2Aly2Ga1-x2-y2N (0≦x2<1, 0≦y2<1, 0<1−x2−y2≦1) of a p-type and provided on a part of the electron supply layer between the source electrode and the drain electrode; and a gate electrode provided on the threshold voltage adjustment layer, wherein a high resistance layer is respectively interposed both between the gate electrode and the threshold voltage adjustment layer and between the threshold voltage adjustment layer and the electron supply layer.