| 发明名称 |
THIN FILM TRANSISTOR SUBSTRATE, DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE |
| 摘要 |
A thin film transistor substrate, a display device including the same, and a method of manufacturing a thin film transistor substrate. The thin film transistor substrate includes: a base plate including a first area and a second area; a nano uneven pattern formed on one side of the base plate in the first area; a wire grid pattern formed on the ne side of the base plate in the second area; a gate electrode disposed on and overlapping the wire grid pattern; and one of a source electrode and a drain electrode disposed on the gate electrode and overlapping the wire grid pattern. |
| 申请公布号 |
US2017097543(A1) |
申请公布日期 |
2017.04.06 |
| 申请号 |
US201615078426 |
申请日期 |
2016.03.23 |
| 申请人 |
Samsung Display Co., Ltd. |
发明人 |
KANG Hoon;KAM Bum Soo;DOH Sung Won;CHANG Chong Sup |
| 分类号 |
G02F1/1335;H01L27/12 |
主分类号 |
G02F1/1335 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin film transistor substrate, comprising:
a base plate comprising a first area and a second area; a nano uneven pattern formed on one side of the base plate in the first area; a wire grid pattern formed on the one side of the base plate in the second area; a gate electrode disposed on and overlapping the wire grid pattern; and one of a source electrode and a drain electrode disposed on the gate electrode and overlapping the wire grid pattern. |
| 地址 |
Yongin-si KR |
