发明名称 |
DIODE, SEMICONDUCTOR DEVICE, AND MOSFET |
摘要 |
Disclosed is a technique capable of reducing loss at the time of switching in a diode. A diode disclosed in the present specification includes a cathode electrode, a cathode region made of a first conductivity type semiconductor, a drift region made of a low concentration first conductivity type semiconductor, an anode region made of a second conductivity type semiconductor, an anode electrode made of metal, a barrier region formed between the drift region and the anode region and made of a first conductivity type semiconductor having a concentration higher than that of the drift region, and a pillar region formed so as to connect the barrier region to the anode electrode and made of a first conductivity type semiconductor having a concentration higher than that of the barrier region. The pillar region and the anode are connected through a Schottky junction. |
申请公布号 |
US2017098700(A1) |
申请公布日期 |
2017.04.06 |
申请号 |
US201615342858 |
申请日期 |
2016.11.03 |
申请人 |
TOYOTA JIDOSHA KABUSHIKI KAISHA |
发明人 |
YAMASHITA Yusuke;MACHIDA Satoru;SUGIYAMA Takahide;SAITO Jun |
分类号 |
H01L29/739;H01L27/06;H01L29/08;H01L29/872;H01L29/16;H01L29/20;H01L29/40;H01L29/78;H01L29/06;H01L29/10 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
1. A MOSFET comprising:
a drain electrode; a drain region made of a first conductivity type semiconductor, a drift region made of a low concentration first conductivity type semiconductor; a body region made of a second conductivity type semiconductor; a source region made of the first conductivity type semiconductor; a source electrode made of metal; a gate electrode opposite to the body region between the source region and the drift region via an insulating film; a barrier region formed between the drift region and the body region and made of a first conductivity type semiconductor having a concentration higher than that of the drift region; and a pillar region formed so as to connect the barrier region to the source electrode and made of a first conductivity type semiconductor having a concentration higher than that of the barrier region, wherein the pillar region and the source electrode are connected through a Schottky junction. |
地址 |
Toyota-shi JP |