SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device, a semiconductor package including the same, and a method of fabricating the same are disclosed. The method may include providing an integrated circuit on a semiconductor chip substrate; providing a first conductive pad on the substrate, the first conductive pad electrically connected to the integrated circuit chip; forming a first insulating layer on the substrate to cover the first conductive pad; forming a mask pattern on the first insulating layer, the mask pattern including an opening vertically overlapping the first conductive pad; removing a portion of the first insulating layer above the first conductive pad by performing etching using the mask pattern, thereby forming an opening in the first insulating layer; depositing an aluminum-containing conductive layer on the mask pattern, such that the mask pattern is between the first insulating layer and the aluminum-containing conductive layer, and such that the aluminum-containing conductive layer fills at least part of the opening and is connected to the first conductive pad; and patterning the aluminum-containing conductive layer to form a conductive pattern

主权项

1. A semiconductor device, comprising:
an integrated circuit on a semiconductor chip substrate; a pad electrically connected to the integrated circuit; a lower insulating structure having a contact hole exposing the pad; and a conductive pattern comprising: a contact portion filling at least part of the contact hole, a conductive line portion provided on the lower insulating structure to extend in a specific direction, and a bonding pad portion, wherein the contact portion has a first thickness at a horizontal portion in a direction perpendicular to a top surface of the substrate and a second thickness at a vertical portion in another direction parallel to the top surface of the substrate, the first thickness is greater than the second thickness, and the lower insulating structure comprises: a plurality of lower inorganic insulating layers sequentially stacked on the substrate; and a first polymer layer on the lower inorganic insulating layers.