THIN-FILM PLANARIZATION METHOD, PLANARIZED THIN-FILM FORMATION METHOD, AND THIN-FILM FORMATION VARNISH

摘要

Provided are a thin-film planarization method, a planarized thin-film formation method, and a thin-film formation varnish to be used in these methods, in which when forming a thin film using a thin-film formation varnish which includes an organic compound and an organic solvent, the varnish flow activation energy is set to no more than 28 kJ/mol.