| 发明名称 | Electronic device and method for fabricating the same | ||
| 摘要 | An electronic device includes a semiconductor memory that includes: an inter-layer dielectric layer which is formed over a substrate; a contact plug which is coupled with the substrate by passing through the inter-layer dielectric layer and has a protruding portion over the inter-layer dielectric layer; a first variable resistance pattern which is formed over the contact plug; and a protective layer which covers the first variable resistance pattern and a portion of sidewalls of the contact plug in such a manner that the sidewalls of the contact plug are exposed. | ||
| 申请公布号 | US9614008(B2) | 申请公布日期 | 2017.04.04 |
| 申请号 | US201514981727 | 申请日期 | 2015.12.28 |
| 申请人 | SK hynix Inc. | 发明人 | Do Kwan-Woo;Park Ki-Seon |
| 分类号 | H01L27/115;H01L27/24;H01L27/22;H01L43/08;H01L45/00;H01L43/02;G11C13/00;H01L27/105 | 主分类号 | H01L27/115 |
| 代理机构 | Perkins Coie LLP | 代理人 | Perkins Coie LLP |
| 主权项 | 1. An electronic device comprising a semiconductor memory that includes: a substrate; an inter-layer dielectric layer which is formed over the substrate; a contact plug which is coupled with the substrate by passing through the inter-layer dielectric layer and has a protruding portion over the inter-layer dielectric layer; a first phase change pattern which is formed over the contact plug; and a protective layer which covers the first phase change pattern and a portion of sidewalls of the contact plug in such a manner that exposes a remaining portion of the sidewalls of the contact plug. | ||
| 地址 | Icheon-Si KR | ||