Display device and method of manufacturing the same

摘要

The display device includes a substrate, a thin film transistor (TFT), which includes a gate electrode, a semiconductor layer, and source and drain electrodes, on the substrate member, a passivation layer on the TFT and having an opening to expose a portion of the drain electrode, and a pixel electrode directly on the drain electrode and only within the opening.

主权项

1. A method for manufacturing a display device, comprising:
forming gate wirings comprising a gate line and a gate electrode on a substrate; forming a gate insulating layer covering the gate wirings; forming a semiconductor layer on the gate insulating layer, at least a portion of the semiconductor layer overlapping the gate electrode; forming data wirings comprising a source electrode and a drain electrode, each of which comprises at least one portion overlapping with the gate electrode and is separated from each other, and a data line on the semiconductor layer; forming a passivation layer on the data wirings; forming a photosensitive polymer pattern on the passivation layer through a photolithography process using a mask; etching the passivation layer using the photosensitive polymer pattern to form an opening exposing a portion of the drain electrode; forming a conductive layer on the portion of the drain electrode exposed via the opening and on the photosensitive polymer pattern; and removing the photosensitive polymer pattern and the conductive layer on the photosensitive polymer pattern to form a pixel electrode, wherein an area of the entire drain electrode is greater than an area of the entire pixel electrode.