| 发明名称 | Integration of absorption based heating bake methods into a photolithography track system | ||
| 摘要 | A method of patterning a layered substrate is provided that includes forming a layer of a block copolymer on a substrate, annealing the layer of the block copolymer to affect microphase segregation such that self-assembled domains are formed, and annealing the layer of the block copolymer a second time to refine or modify the microphase segregation, where one of the annealing steps uses an absorption based heating method. | ||
| 申请公布号 | US9613801(B2) | 申请公布日期 | 2017.04.04 |
| 申请号 | US201514858568 | 申请日期 | 2015.09.18 |
| 申请人 | Tokyo Electron Limited | 发明人 | Carcasi Michael A.;Somervell Mark H.;Rathsack Benjamen M. |
| 分类号 | H01L21/00;H01L21/02;H01L21/027;B81C1/00;G03F7/00;H01L21/268;H01L21/28;H01L21/66 | 主分类号 | H01L21/00 |
| 代理机构 | Wood Herron & Evans LLP | 代理人 | Wood Herron & Evans LLP |
| 主权项 | 1. A method of patterning a layered substrate, comprising: a) forming a layer of a block copolymer; b) performing an annealing treatment of the layer of the block copolymer to affect microphase segregation such that self-assembled domains are formed; and c) thereafter, annealing the layer of the block copolymer to refine or modify the microphase segregation to correct one or more defects in the self-assembled domains, wherein at least the annealing (c) is an absorption based heating method that comprises exposing at least a portion of the layer of the block copolymer to electromagnetic radiation to heat the exposed portion of the layer of the block copolymer to an annealing temperature in a range of 250° C. to 500° C. | ||
| 地址 | Tokyo JP | ||