Methods of forming MIS contact structures on transistor devices in CMOS applications

摘要

A method that includes, among other things, forming first and second contact openings in a layer of insulating material that respectively expose a portion of first and second source/drain (S/D) regions of first and second transistors that are of the opposite type, forming first, second and third layers of material within each of the first and second contact openings, and forming an implant masking layer that masks the first contact opening while leaving the second contact opening exposed for further processing. The method also includes forming a contact ion implant region that is positioned at least partially in at least one of the first, second or third layers of material, removing the implant masking layer and forming a conductive material in both the first and second contact openings so as to define first and second MIS contact structures positioned in the first and second contact openings.

主权项

1. A method of forming an MIS contact structure on an integrated circuit product comprising first and second transistors of opposite types, comprising:
forming first and second contact openings in at least one layer of insulating material, said first contact opening exposing a portion of a first source/drain (S/D) region of said first transistor, said second contact opening exposing a portion of a second S/D region of said second transistor; performing a plurality of conformal deposition processes to form first, second and third layers of material within each of said first and second contact openings wherein:
said first layer comprises a contact insulating material, said first layer being positioned on said exposed portion of said first S/D region within said first contact opening and on said exposed portion of said second S/D region within said second contact opening;said second layer comprises a metal-containing material, said second layer being positioned on said first layer in both said first and second contact openings; andsaid third layer comprises a conductive cap material, said third layer being positioned above said second layer in both said first and second contact openings; forming an implant masking layer that masks said first contact opening while leaving said second contact opening exposed for further processing; performing a contact ion implantation process through said implant masking layer to form a contact ion implant region comprising a contact ion that is positioned at least partially in at least one of said first, second or third layers of material positioned within said second contact opening; removing said implant masking layer; forming a fourth layer of material comprising a conductive material above said third layer in both said first and second contact openings such that said fourth layer overfills said first and second contact openings; and performing at least one process operation to remove portions of said first, second, third and fourth layers of material positioned outside of said first and second contact openings to define a first MIS contact structure positioned in said first contact opening and a second MIS contact structure positioned in said second contact opening.