发明名称 |
Semiconductor device and switching circuit |
摘要 |
A semiconductor device includes: a main switching element, a current-sensing switching element and a surge protection element, which are formed on a single semiconductor substrate, wherein the surge protection element is a bidirectional diode connected between a first main electrode of the main switching element and a first main electrode of the current-sensing switching element. Also, a switching circuit includes the semiconductor device and a detection resistor connected to the first main electrode of the current-sensing switching element; and a driving device that drives the semiconductor device based on a voltage drop occurring in the detection resistor when the semiconductor device is turned on. |
申请公布号 |
US9613944(B2) |
申请公布日期 |
2017.04.04 |
申请号 |
US201414572890 |
申请日期 |
2014.12.17 |
申请人 |
Sanken Electric Co., LTD. |
发明人 |
Hanaoka Masayuki |
分类号 |
H03K3/00;H01L27/02;H03K17/567;H03K17/687;H01L27/06 |
主分类号 |
H03K3/00 |
代理机构 |
Banner & Witcoff, Ltd. |
代理人 |
Banner & Witcoff, Ltd. |
主权项 |
1. A semiconductor device comprising:
a main switching element, a current-sensing switching element and a surge protection element, which are formed on a single semiconductor substrate, wherein the surge protection element is a NPN bidirectional diode having a first terminal connected to a first main electrode of the main switching element and a second terminal connected to a first main electrode of the current-sensing switching element, the bidirectional diode breaking down causing a current to flow in a breaking down condition that a voltage applied across both ends exceeds a predetermined withstanding voltage. |
地址 |
Niiza-shi, Saitama JP |