发明名称 Semiconductor device and switching circuit
摘要 A semiconductor device includes: a main switching element, a current-sensing switching element and a surge protection element, which are formed on a single semiconductor substrate, wherein the surge protection element is a bidirectional diode connected between a first main electrode of the main switching element and a first main electrode of the current-sensing switching element. Also, a switching circuit includes the semiconductor device and a detection resistor connected to the first main electrode of the current-sensing switching element; and a driving device that drives the semiconductor device based on a voltage drop occurring in the detection resistor when the semiconductor device is turned on.
申请公布号 US9613944(B2) 申请公布日期 2017.04.04
申请号 US201414572890 申请日期 2014.12.17
申请人 Sanken Electric Co., LTD. 发明人 Hanaoka Masayuki
分类号 H03K3/00;H01L27/02;H03K17/567;H03K17/687;H01L27/06 主分类号 H03K3/00
代理机构 Banner & Witcoff, Ltd. 代理人 Banner & Witcoff, Ltd.
主权项 1. A semiconductor device comprising: a main switching element, a current-sensing switching element and a surge protection element, which are formed on a single semiconductor substrate, wherein the surge protection element is a NPN bidirectional diode having a first terminal connected to a first main electrode of the main switching element and a second terminal connected to a first main electrode of the current-sensing switching element, the bidirectional diode breaking down causing a current to flow in a breaking down condition that a voltage applied across both ends exceeds a predetermined withstanding voltage.
地址 Niiza-shi, Saitama JP