发明名称 Recovery for non-volatile memory after power loss
摘要 Non-volatile memory array can be recovered after a power loss. In one example, pages of a memory array are scanned to find a first free page after the power loss. The first free page is marked as available, and the page marked as available is written to with the next write cycle.
申请公布号 US9612954(B2) 申请公布日期 2017.04.04
申请号 US200812347935 申请日期 2008.12.31
申请人 Micron Technology, Inc. 发明人 Edgington Joseph;Chowdhury Hisham
分类号 G06F12/00;G06F12/02 主分类号 G06F12/00
代理机构 Schwegman Lundberg & Woessner, P.A. 代理人 Schwegman Lundberg & Woessner, P.A.
主权项 1. A method comprising: scanning pages, beginning at a first selected logical page of a memory array, to find a first free page, the first free page being determined by making a determination whether a page contains data; based on a determination the page contains data, determining whether a commit marker is present in a header in a specifically allocated portion on the page; based on a determination that a commit marker is present in the header on the page, scanning a subsequent page; andbased on a determination that a commit marker is not present in the header on the page, designating a page subsequent to the page as the first free page; andbased on a determination that the page does not contain data; designating a page subsequent to the page as the first free page;marking the first free page as available; andwriting to the page marked as available with the next write cycle.
地址 Boise ID US