发明名称 |
Recovery for non-volatile memory after power loss |
摘要 |
Non-volatile memory array can be recovered after a power loss. In one example, pages of a memory array are scanned to find a first free page after the power loss. The first free page is marked as available, and the page marked as available is written to with the next write cycle. |
申请公布号 |
US9612954(B2) |
申请公布日期 |
2017.04.04 |
申请号 |
US200812347935 |
申请日期 |
2008.12.31 |
申请人 |
Micron Technology, Inc. |
发明人 |
Edgington Joseph;Chowdhury Hisham |
分类号 |
G06F12/00;G06F12/02 |
主分类号 |
G06F12/00 |
代理机构 |
Schwegman Lundberg & Woessner, P.A. |
代理人 |
Schwegman Lundberg & Woessner, P.A. |
主权项 |
1. A method comprising:
scanning pages, beginning at a first selected logical page of a memory array, to find a first free page, the first free page being determined by making a determination whether a page contains data;
based on a determination the page contains data, determining whether a commit marker is present in a header in a specifically allocated portion on the page;
based on a determination that a commit marker is present in the header on the page, scanning a subsequent page; andbased on a determination that a commit marker is not present in the header on the page, designating a page subsequent to the page as the first free page; andbased on a determination that the page does not contain data; designating a page subsequent to the page as the first free page;marking the first free page as available; andwriting to the page marked as available with the next write cycle. |
地址 |
Boise ID US |