| 摘要 |
The present invention relates to a method for producing a via fill substrate, said method including: a metal film formation step in which a metal film is formed, said metal film comprising an active metal on a hole wall surface of an insulating substrate that comprises a hole; a filling step in which a conductor paste having a volume change rate of -10% to 20% before and after firing is used to fill the hole formed in the metal film; and a firing step in which the insulating substrate that has been filled with the conductor paste is fired. |
