| 发明名称 |
METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE |
| 摘要 |
There is provided a method of manufacturing a nitride semiconductor device. The method of manufacturing the nitride semiconductor device comprises: a first film forming process that forms a first film on a nitride semiconductor layer; an ion implantation process that implants a P-type impurity into the nitride semiconductor layer through the first film by ion implantation; a second film forming process that forms a second film on the first film, after the ion implantation process; and a heat treatment process that processes the nitride semiconductor layer by heat treatment after the second film forming process. This suppresses the surface of the nitride semiconductor layer from being roughened. |
| 申请公布号 |
US2017092493(A1) |
申请公布日期 |
2017.03.30 |
| 申请号 |
US201615164988 |
申请日期 |
2016.05.26 |
| 申请人 |
TOYODA GOSEI CO., LTD. |
发明人 |
NIWA Takaki;FUJII Takahiro;KOSAKI Masayoshi;OKA Tohru |
| 分类号 |
H01L21/02;H01L21/324 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a nitride semiconductor device, comprising:
a first film forming process that forms a first film on a nitride semiconductor layer; an ion implantation process that implants a P-type impurity into the nitride semiconductor layer through the first film by ion implantation; a second film forming process that forms a second film on the first film, after the ion implantation process; and a heat treatment process that processes the nitride semiconductor layer by heat treatment after the second film forming process. |
| 地址 |
Kiyosu-shi JP |
