发明名称 CONDUCTIVE PLUG STRUCTURE AND FABRICATION METHOD THEREOF
摘要 The present disclosure provides conductive plug structures and fabrication methods thereof. An exemplary fabrication process of the conductive plug structure includes providing a substrate; forming a mask layer having an opening on a surface of the substrate; etching the substrate to form a contact hole using the mask layer as an etching mask; etching the mask layer to increase a feature size of the opening; forming an insulation layer on an inner surface of the opening, an inner surface of the enlarged opening and a surface of the mask layer to have more edge corners, a thickness of the insulation layer being greater than a thickness of the remaining mask layer; forming a conductive layer filling the contact hole on the insulation layer; and planarizing the conductive layer and the insulation layer until a surface of the mask layer is exposed.
申请公布号 US2017092537(A1) 申请公布日期 2017.03.30
申请号 US201615277853 申请日期 2016.09.27
申请人 Semiconductor Manufacturing International (Shanghai) Corporation ;Semiconductor Manufacturing International (Beijing) Corporation 发明人 WANG LIANG;MA XIAOTIAN
分类号 H01L21/768;H01L23/532;H01L23/528;H01L23/522 主分类号 H01L21/768
代理机构 代理人
主权项 1. A method for fabricating a conductive plug structure, comprising: providing a substrate; forming a mask layer having an opening on a surface of the substrate; etching the substrate to form a contact hole using the mask layer as an etching mask; etching the mask layer to increase a feature size of the opening; forming an insulation layer on an inner surface of the opening, an inner surface of the enlarged opening and a surface of the mask layer to have more edge corners, a thickness of the insulation layer being greater than a thickness of the remaining mask layer; forming a conductive layer filling the contact hole on the insulation layer; and planarizing the conductive layer and the insulation layer until a surface of the mask layer is exposed.
地址 Shanghai CN