| 摘要 |
The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission efficiency. The Group III nitride semiconductor light-emitting device includes a base layer, an n-type superlattice layer, a light-emitting layer, and a p-type cladding layer, each of the layers being made of Group III nitride semiconductor. An electron injection adjusting layer comprising a single AlxGa1-xN (0<x<1) layer and having a thickness of 5 Å to 30 Å is formed in the base layer. The n-type superlattice layer is a superlattice layer having a periodic structure of an InyGa1-yN (0<y<1) layer, an i-GaN layer, and an n-GaN layer. The electron injection adjusting layer has a thickness of 5 Å to 30 Å and an Al composition ratio of 0.15 to 0.5. |
| 主权项 |
1. A Group III nitride semiconductor light-emitting device comprising a substrate, an n-electrode, a layered structure including a single crystal base layer formed on the substrate, an n-type layer side superlattice layer in contact with the base layer, a light-emitting layer in contact with the n-type layer side superlattice layer, a p-type layer side cladding layer, and a p-type layer side contact layer deposited in this order, each of the layers being formed of a Group III nitride semiconductor, and a p-electrode,
wherein the n-type layer side superlattice layer has a layered structure of an InzGa1-zN (0<z<1) layer having a constant composition ratio over the entire cycles and a GaN layer repeatedly deposited; and wherein the base layer includes an electron injection adjusting layer which is formed in a path in which the electrons injected from the n-electrode flow to the p-electrode, as a layer disposed in the base layer or a layer in contact with the n-type superlattice layer, and which comprises a single AlxGayIn1-x-yN (0<x<1, 0<y<1, 0<x+y≦1) layer having an electron level of the bottom of conduction band higher than that of any other layers constituting the base layer and having a thickness of 5 Å to 30 Å. |
