HIGH-ELECTRON-MOBILITY TRANSISTORS WITH HETEROJUNCTION DOPANT DIFFUSION BARRIER
摘要
III-V compound semiconductor devices, such transistors, may be formed in active regions of a III-V semiconductor material disposed over a silicon substrate. A heterojunction between an active region of III-V semiconductor and the substrate provides a diffusion barrier retarding diffusion of silicon from the substrate into III-V semiconductor material where the silicon might otherwise behave as an electrically active amphoteric contaminate. In some embodiments, the heterojunction is provided within a base portion of a sub-fin disposed between the substrate and a fin containing a transistor channel region. The heterojunction positioned closer to the substrate than active fin region ensures thermal diffusion of silicon atoms is contained away from the active region of a III-V finFET.
申请公布号
WO2017052609(A1)
申请公布日期
2017.03.30
申请号
WO2015US52302
申请日期
2015.09.25
申请人
INTEL CORPORATION
发明人
MOHAPATRA, Chandra S.;METZ, Matthew V.;KENNEL, Harold W.;DEWEY, Gilbert;RACHMADY, Willy;MURTHY, Anand S.;KAVALIEROS, Jack T.;GHANI, Tahir