SELF-ALIGNED GATE TIE-DOWN CONTACTS WITH SELECTIVE ETCH STOP LINER

摘要

A method for forming a gate tie-down includes exposing an active area to form trench contact openings and forming trench contacts therein. An etch stop layer is formed on the trench contacts and on spacers of adjacent gate structures. An interlevel dielectric (ILD) is deposited to fill over the etch stop layer. The ILD and the etch stop layer on one side of the gate structure are opened up to provide an exposed etch stop layer portion. The gate structure is recessed to expose a gate conductor. The exposed etch stop layer portion is removed. A conductive material is deposited to provide a self-aligned contact down to the trench contact on the one side of the gate structure, to form a gate contact down to the gate conductor and to form a horizontal connection within the ILD over the active area between the gate conductor and the self-aligned contact.

主权项

1. A gate tie-down structure, comprising:
a gate structure including a gate conductor and gate spacers; trench contacts formed on sides of the gate structure; an etch stop layer portion formed on a gate spacer on one side of the gate structure and over the trench contact on the one side of the gate structure; a first interlevel dielectric (ILD) configured to bury the gate structure; a second interlevel dielectric (ILD) having a thickness and being formed on the first ILD and over the etch stop layer portion; a self-aligned contact connecting to the trench contact on the other side of the gate structure; a gate contact connected to the gate conductor; and a horizontal connection within the thickness of the second ILD formed over an active area and connecting the gate conductor and the self-aligned contact over a gate spacer formed on the other side of the gate structure.