发明名称 |
Wafer Level Package (WLP) and Method for Forming the Same |
摘要 |
A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a substrate and a conductive pad formed on the substrate. The semiconductor device structure includes a protection layer formed over the conductive pad and a post-passivation interconnect (PPI) structure formed at least in the protection layer. The PPI structure is electrically connected to the conductive pad. The semiconductor device structure also includes a first moisture-resistant layer formed over the protection layer, and the protection layer and the first moisture-resistant layer are made of different materials. The semiconductor device structure further includes an under bump metallurgy (UBM) layer formed over the first moisture-resistant layer and connected to the PPI structure. |
申请公布号 |
US2017092597(A1) |
申请公布日期 |
2017.03.30 |
申请号 |
US201615376437 |
申请日期 |
2016.12.12 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Jeng Shin-Puu;Liu Hsien-Wen |
分类号 |
H01L23/00;H01L21/02;H01L23/538;H01L23/31 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device, comprising:
a substrate; a conductive pad formed on the substrate; a first protection layer formed over the conductive pad; a second protection layer formed over the first protection layer; a post-passivation interconnect (PPI) structure having a first region extending into the first protection layer and having a second portion extending over the second protection layer; and a first moisture-resistant layer formed over the protection layer, wherein the protection layer and the first moisture-resistant layer are made of different materials. |
地址 |
Hsin-Chu TW |