THERMALLY INSULATED RESISTIVE RANDOM ACCESS MEMORY

摘要

An embodiment includes a resistive random access memory (RRAM) comprising: a top electrode portion and a bottom electrode portion; and an oxide layer between the top and bottom electrode portions; wherein (a) a conductive filament is within the oxide layer and is adjacent the top electrode portion, (b) the oxide layer includes oxide layer sidewalls, (c) a vertical axis intersects the oxide layer and the top and bottom electrode portions and is parallel to the oxide layer sidewalls, and (d) a void, which includes air, is adjacent the oxide layer sidewalls. Other embodiments are described herein.