发明名称 |
HIGH-ELECTRON-MOBILITY TRANSISTORS WITH COUNTER-DOPED DOPANT DIFFUSION BARRIER |
摘要 |
III-V compound semiconductor devices, such transistors, may be formed in active regions of a III-V semiconductor material disposed over a silicon substrate. A counter-doped portion of a III-V semiconductor material provides a diffusion barrier retarding diffusion of silicon from the substrate into III-V semiconductor material where it might otherwise behave as electrically active amphoteric contaminate in the III-V material. In some embodiments, counter-dopants (e.g., acceptor impurities) are introduced in-situ during epitaxial growth of a base portion of a sub-fin structure. With the counter-doped region limited to a base of the sub-fin structure, risk of the counter-dopant atoms thermally diffusing into an active region of a III-V transistor is mitigated. |
申请公布号 |
WO2017052608(A1) |
申请公布日期 |
2017.03.30 |
申请号 |
WO2015US52299 |
申请日期 |
2015.09.25 |
申请人 |
INTEL CORPORATION |
发明人 |
MOHAPATRA, Chandra S.;KENNEL, Harold W.;METZ, Matthew V.;DEWEY, Gilbert;RACHMADY, Willy;MURTHY, Anand S.;KAVALIEROS, Jack T.;GHANI, Tahir |
分类号 |
H01L29/778 |
主分类号 |
H01L29/778 |
代理机构 |
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