发明名称 |
LATERAL STACK OF COBALT AND A COBALT-SEMICONDUCTOR ALLOY FOR CONTROL GATE ELECTRODES IN A MEMORY STRUCTURE |
摘要 |
An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. Memory stack structures and a backside trench are formed through the alternating stack. Backside recesses are formed by removing the sacrificial material layers through the backside trench selective to the insulating layers. A cobalt portion is formed in each backside recess. A cobalt-semiconductor alloy portion can be formed on each cobalt portion by depositing a semiconductor material layer on the cobalt portions and reacting the semiconductor material with surface regions of the cobalt portions. A residual portion of the cobalt-semiconductor alloy formed above the alternating stack can be removed by an anisotropic etch or by a planarization process. A combination of a cobalt portion and a cobalt-semiconductor alloy portion within each backside recess can be employed as a word line of a three-dimensional memory device. |
申请公布号 |
WO2017052697(A1) |
申请公布日期 |
2017.03.30 |
申请号 |
WO2016US36349 |
申请日期 |
2016.06.08 |
申请人 |
SANDISK TECHNOLOGIES LLC |
发明人 |
PERI, Somesh;KOKA, Sateesh;MAKALA, Raghuveer S. |
分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|