发明名称 |
ORGANIC LIGHT EMITTING DEVICE |
摘要 |
An organic light emitting device including an organic light emitting element having a low driving voltage and a high luminous efficiency is provided. The organic light emitting device includes two or more stack emission units, and a charge generating layer including an N-type charge generating layer and a P-type charge generating layer is disposed between the stack emission units. Herein, the P-type charge generating layer is formed of a material having an LUMO energy level similar to an HOMO energy level of a hole transporting layer injected with holes from the P-type charge generating layer. Accordingly, even if the P-type charge generating layer is not additionally doped with a P-type dopant, it is possible to readily inject holes into a stack emission unit adjacent to the P-type charge generating layer. |
申请公布号 |
US2017092887(A1) |
申请公布日期 |
2017.03.30 |
申请号 |
US201615195024 |
申请日期 |
2016.06.28 |
申请人 |
LG Display Co., Ltd. |
发明人 |
LEE JaeMan;YOO Taesun;HAN Mi-Young;AHN SoYeon;CHOI Heedong;PARK JungSoo;HAN Yoondeok |
分类号 |
H01L51/50;H01L51/52;H01L27/32 |
主分类号 |
H01L51/50 |
代理机构 |
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代理人 |
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主权项 |
1. An organic light emitting device comprising:
a first stack emission unit including a first hole transporting layer, a first emitting layer, and a first electron transporting layer; a second stack emission unit including a second hole transporting layer, a second emitting layer, and a second electron transporting layer; and a first charge generating layer between the first stack emission unit and the second stack emission unit, wherein the first charge generating layer includes an N-type charge generating layer configured to inject electrons into the first stack emission unit and a P-type charge generating layer configured to inject holes into the second stack emission unit, the P-type charge generating layer and the second hole transporting layer are in direct contact with each other, and a difference between a lowest unoccupied molecular orbital (LUMO) energy level of the P-type charge generating layer and a highest occupied molecular orbital (HOMO) energy level of the second hole transporting layer is smaller than a difference between a HOMO energy level of the P-type charge generating layer and the HOMO energy level of the second hole transporting layer. |
地址 |
Seoul KR |