发明名称 ORGANIC LIGHT EMITTING DEVICE
摘要 An organic light emitting device including an organic light emitting element having a low driving voltage and a high luminous efficiency is provided. The organic light emitting device includes two or more stack emission units, and a charge generating layer including an N-type charge generating layer and a P-type charge generating layer is disposed between the stack emission units. Herein, the P-type charge generating layer is formed of a material having an LUMO energy level similar to an HOMO energy level of a hole transporting layer injected with holes from the P-type charge generating layer. Accordingly, even if the P-type charge generating layer is not additionally doped with a P-type dopant, it is possible to readily inject holes into a stack emission unit adjacent to the P-type charge generating layer.
申请公布号 US2017092887(A1) 申请公布日期 2017.03.30
申请号 US201615195024 申请日期 2016.06.28
申请人 LG Display Co., Ltd. 发明人 LEE JaeMan;YOO Taesun;HAN Mi-Young;AHN SoYeon;CHOI Heedong;PARK JungSoo;HAN Yoondeok
分类号 H01L51/50;H01L51/52;H01L27/32 主分类号 H01L51/50
代理机构 代理人
主权项 1. An organic light emitting device comprising: a first stack emission unit including a first hole transporting layer, a first emitting layer, and a first electron transporting layer; a second stack emission unit including a second hole transporting layer, a second emitting layer, and a second electron transporting layer; and a first charge generating layer between the first stack emission unit and the second stack emission unit, wherein the first charge generating layer includes an N-type charge generating layer configured to inject electrons into the first stack emission unit and a P-type charge generating layer configured to inject holes into the second stack emission unit, the P-type charge generating layer and the second hole transporting layer are in direct contact with each other, and a difference between a lowest unoccupied molecular orbital (LUMO) energy level of the P-type charge generating layer and a highest occupied molecular orbital (HOMO) energy level of the second hole transporting layer is smaller than a difference between a HOMO energy level of the P-type charge generating layer and the HOMO energy level of the second hole transporting layer.
地址 Seoul KR